1 1 1/12/01 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. p-channel enhancement-mode v ertical dmos fets tp2635 tp2640 ordering information bv dss /r ds(on) v gs(th) i d(on) bv dgs (max) (max) (min) so-8 to-92 die ? -350v 15 ? -2.0v -0.7a tp2635n3 -400v 15 ? -2.0v -0.7a tp2640lg tp2640n3 TP2640ND ? mil visual screening available. order number / package low threshold dmos technology these low threshold enhancement-mode (normally-off) transis- tors utilize a vertical dmos structure and supertex? well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertex? vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. features ? low threshold ?-2.0v max. ? high input impedance ? low input capacitance ? fast switching speeds ? low on resistance ? free from secondary breakdown ? low input and output leakage ? complementary n- and p-channel devices applications ? logic level interfaces ?ideal for ttl and cmos ? solid state relays ? battery operated systems ? photo voltaic drives ? analog switches ? general purpose line drivers ? t elecom switches absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. package options s g d note: see package outline section for dimensions. t o-92 1 2 3 4 8 7 6 5 so-8 top view nc d nc d sd gd low threshold
2 tp2635/tp2640 package i d (continuous)* i d (pulsed) power dissipation jc ja i dr *i drm @ t c = 25 c c/w c/w so-8 -210ma -1.25a 1.3w ? 24 96 ? -210ma -1.25a to-92 -180ma -0.8a 1.0w 125 170 -180ma -0.8a * i d (continuous) is limited by max rated t j . ? mounted on fr4 board, 25mm x 25mm x 1.57mm. thermal characteristics symbol parameter min typ max unit conditions bv dss tp2640 -400 v v gs = 0v, i d = -2.0ma tp2635 -350 v gs(th) gate threshold voltage -0.8 -2.0 v v gs = v ds , i d = -1.0ma ? v gs(th) change in v gs(th) with temperature 5.0 mv/ cv gs = v ds , i d = -1.0ma i gss gate body leakage -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current -1 av gs = 0v, v ds = -100v -10 av gs = 0v, v ds = max rating -1 ma v gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current 0.7 v gs = -10v, v ds = -25v r ds(on) 12 15 v gs = -2.5v, i d = -20ma 11 15 v gs = -4.5v, i d = -150ma 11 15 v gs = -10v, i d = -300ma ? r ds(on) change in r ds(on) with temperature 0.75 %/ cv gs = -10v, i d = -300ma g fs forward transconductance 200 m v ds = -25v, i d = -300ma c iss input capacitance 300 c oss common source output capacitance 50 pf c rss reverse transfer capacitance 12 t d(on) turn-on delay time 10 t r rise time 15 t d(off) turn-off delay time 60 t f fall time 40 v sd diode forward voltage drop -1.8 v v gs = 0v, i sd = -200ma t rr reverse recovery time 300 ns v gs = 0v, i sd = -200ma notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. a ? electrical characteristics (@ 25 c unless otherwise specified) drain-to-source breakdown voltage v gs = 0v, v ds = -25v f = 1 mhz v dd = -25v, i d = -300ma, r gen = 25 ? ns static drain-to-source on-state resistance ? 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v switching waveforms and test circuit
3 tp2635/tp2640 t ypical performance curves output characteristics -2.0 -1.6 -1.2 -0.8 -0.4 0 v ds (volts) i (amperes) d saturation characteristics v ds (volts) i (amperes) d maximum rated safe operating area -1 -1000 -100 -10 -10 -1.0 -0.1 -0.01 -0.001 v ds (volts) i (amperes) d thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1.0 t p (seconds) t ransconductance vs. drain current 1.0 0.8 0.6 0.4 0.2 0 0 -0.8 -0.4 g fs (siemens) i d (amperes) power dissipation vs. temperature 0 150 100 50 2.0 1.6 1.2 0.8 0.4 0 125 75 25 t c c) ( d p (watts) to-92 t c = 25 c p d = 1.0w so-8 to-92 t a = -55 c v ds = -25v 0 -10 -20 -30 -50 -40 0-2-4- 6 -10 -8 25 c 125 c -1.2 -2.0 -1.6 -1.0 -0.8 -0.6 -0.4 -0.2 0 v gs = -10v -3v -4v -6v -8v v gs = -10v -8v -6v -3v -4v so-8 (pulsed) t c = 25 c to-92 (dc) to-92 (pulsed) so-8 (dc)
4 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 744-0100 ?fax: (408) 222-4895 www.supertex.com 1 1/12/01 ?001 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. tp2635/tp2640 t ypical curves gate drive dynamic characteristics q (nanocoulombs) g v gs (volts) t j gs(th) v (normalized) ds(on) r (normalized) v th and r ds variation with temperature c) ( on-resistance vs. drain current (amperes) d (ohms) ds(on) r variation with temperature dss dss bv (normalized) c) ( t j transfer characteristics v gs (volts) i (amperes) d capacitance vs. drain-to-source voltage 400 c (picofarads) v ds (volts) i bv 0 -10 -20 -30 -40 200 300 100 0 0-2- 4-6-8-10 -2.0 -1.6 -1.2 -0.8 -0.4 0 -50 0 50 100 150 1.1 1.0 30 24 18 12 6 0 1.2 1.0 0.8 0.6 0.4 -10 -8 -6 -4 -2 012 3 45 -50 0 50 100 150 263pf v ds = -10v v ds = -40v 678pf v gs = -4.5v v gs = -10v v gs = -2.5v +125 c 0 -0.4 -0.8 -1.2 -2.0 -1.6 f = 1mhz c iss c oss c rss 0.9 2.5 2.0 1.5 1.0 0.5 0 r ds(on) @ -10v, -0.3a 25 c t a = -55 c v ds = -25v 0 v (th) @ -1ma
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